Dynamic spectral width of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation |
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| Authors: | Suzuki M. Noda Y. Kushiro Y. Akiba S. |
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| Affiliation: | KDD Research & Development Laboratories, Tokyo, Japan; |
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| Abstract: | The first measurements of dynamic spectra of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation are reported. A spectral broadening factor ? was determined from the relative sideband strength to the carrier, and it decreased with increasing operating electric field in the modulator. The estimated ?-value for full modulation was |?| = 2.3, which can be reduced by designing a modulator to give a more effective change of electro-absorption. |
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