Effect of structured parameters on the hot-carrier immunity of transparent gate recessed channel (TGRC) MOSFET

In this work, the impact of parameter variation on hot-carrier effect immunity in transparent gate recessed channel (TGRC)—MOSFET based on the hydrodynamic energy transport model have been studied. The parameters of TGRC-MOSFET investigated include the oxide thickness, negative junction depth, and substrate doping. TCAD analysis shows the performance of TGRC-MOSFET in terms of transfer characteristics, transconductance, electric field, electron velocity, electron mobility and electron temperature. The simulation results indicate the improved hot-carrier immunity for TGRC-MOSFET in 30 nm device.