分子束外延In掺杂硅基碲镉汞研究

利用分子束外延(Molecular Beam Epitaxy, MBE)系统生长了In掺杂硅基碲镉汞(Mercury Cadmium Telluride, MCT)材料。通过控制In源温度获得了不同掺杂水平的高质量MCT外延片。二次离子质谱仪(Secondary Ion Mass Spectrometer, SIMS)测试结果表明，In掺杂浓度在1×10¹⁵～2×10¹⁶ cm^-3之间。表征了不同In掺杂浓度对MCT外延层位错的影响。发现位错腐蚀坑形态以三角形为主(沿<■>方向排列),且位错密度与未掺杂样品基本相当。对不同In掺杂浓度的材料进行汞饱和低温处理后，样品的电学性能均有所改善。结果表明，In掺杂能够提高材料的均匀性，从而获得较高的电子迁移率。

Study on In-Doped HgCdTe on Silicon Substrate by Molecular Beam Epitaxy

In-doped mercury cadmium telluride (MCT) material was grown using a molecular beam epitaxy (MBE) system. High quality MCT epitaxial wafers with different doping levels were obtained by controlling the In source temperature. The secondary ion mass spectrometer (SIMS) test results show that the concentration of In doping is between 1×10¹⁵ cm^-3 and 2×10¹⁶ cm^-3. The effect of different In doping concentrations on dislocations in the MCT epitaxial layer was characterized. It is found that the dislocation etch pits are mainly triangular in shape, arranged in the direction of <111>. The dislocation density is approximately the same as that of the undoped sample. The electrical properties of the samples were improved after mercury saturation low-temperature treatment for materials with different In doping concentrations. The results confirm that In doping can improve the homogeneity of the material, thereby obtaining a higher electron mobility.