High-power C band Read IMPATT diodes |
| |
| Authors: | Adlerstein MG Wallace RN Steele SR |
| |
| Affiliation: | Raytheon Research Division, Waltham, USA; |
| |
| Abstract: | A GaAs multimesa Read IMPATT-diode structure has been developed for operation in C band. Such devices give reproducible oscillator power output levels in excess of 10 W c.w. at 5 GHz. Junction temperature rises less than1 80 deg C are observed during high-power operation. The diodes are constructed with an integral gold-plated heatsink and bonded with Au : Sn eutectic solder in a small package. |
| |
| Keywords: | |
|
