GaAs power f.e.t.s with semi-insulated gates |
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| Authors: | Macksey HM Shaw DW Wisseman WR |
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| Affiliation: | Texas Instruments Incorporated, Dallas, USA; |
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| Abstract: | GaAs semi-insulated-gate f.e.t.s (s.i.g.f.e.t.s) have been fabricated by Ar+ bombardment in the gate region. The d c. characteristics and microwave performance are compared with those of conventional power m.e.s.f.e.t.s fabricated from the same slice. Up to 2.9W output power with 4dB gain has been obtained from s.i.g.f.e.t. devices at 8 GHz. |
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