扩散硅压力传感器长期稳定性提升试验方法研究

扩散硅压力传感器结构简单、集成度高、批量制造兼容性强,是目前MEMS领域研究最多的传感器类型,该类传感器面向航空航天等高端应用的最大技术瓶颈是封装后的传感器长期稳定性,因此相关长期稳定性提升技术已成为学术界和产业界广泛关注的共性关键技术。采用控制变量法和正交试验法,对比评价了疲劳脉动、冷热循环和振动时效三种常用长期稳定性提升技术对扩散硅压力传感器的作用效果。对比试验结果表明,三种技术均可改善扩散硅压力传感器的长期稳定性,且存在较优的环境应力参数组合,使传感器稳定性较试验前提升90%以上。本文的研究成果对各类硅压力传感器的长期稳定性提升具有较好的借鉴意义。

Study on Long-Term Stability Improvement Test Method of Diffused Silicon Pressure Sensor

Diffusion silicon pressure sensor is one of the most attractive MEMS sensors due to its simple structure,high integration,and strong compatibility of batch manufacturing.The biggest technical bottleneck of this sensor for high-end applications such as aerospace is long-term stability after packaging.Therefore,long-term stability improvement technologies,as the common key technologies,have been widely concerned by academia and industry.In this paper,three common enabling technologies including pulsating fatigue,thermal-cold cycling and vibration aging are adopted to evaluate the effect of long-term stability of diffused silicon pressure sensors by using control variable method and orthogonal test method.The comparative test results indicate that all these three technologies can improve the long-term stability of the diffused silicon pressure sensor.In addition,an optimized combination of environmental stress parameters is found to improve the stability of the sensor more than 90%higher than before the test.The research results can be used for reference to improve the long-term stability of various silicon pressure sensors.