Sialon formation by Si+ and N2 + ion implantation into sapphire

Single-crystal alumina was implanted firstly with 400 keV Si⁺ and subsequently with N₂ ⁺ ions and then annealed at 1673 K in an No atmosphre. The implanted layers were characterized by means of X-ray diffraction, Rutherford backscattering-channelling of 2 MeV He⁺ ions, and the resonance nuclear reaction¹⁵N(p,)¹²C. The annealing of sapphire implanted at ambient temperature resulted in the formation of-sialon, a solid solution of-silicon nitride and alumina in the subsurface layer, while implantation at 100 K resulted in the formation of aluminium oxynitride in the surface layer. In the latter case, the implanted silicon atoms were believed not to react vxi1h the implanted nitrogen atoms but with the substrate oxygen atoms. These crystalline precipitates were found to have epitaxial relations with the sapphire substrate.