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Optical and electrical properties of p-type AgInSnxS2−x (x = 0–0.04) thin films prepared by spray pyrolysis
Authors:ML Albor-Aguilera  JJ Cayente-Romero  JM Peza-Tapia  LR De Len-Gutirrez  M Ortega-Lpez
Affiliation:

aDepto. de Ingeniería Eléctrica-SEES, CINVESTAV-IPN, México D.F., 07360, México

bESFM-IPN, UPALM, Zacatenco, México D. F. 07738, México

Abstract:AgInSnxS2?x (x = 0–0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2?x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2?x (x < 2) thin films.
Keywords:AgInSnxS2?x  Thin films  Optical and electrical properties
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