aDepto. de Ingeniería Eléctrica-SEES, CINVESTAV-IPN, México D.F., 07360, México
bESFM-IPN, UPALM, Zacatenco, México D. F. 07738, México
Abstract:
AgInSnxS2?x (x = 0–0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2?x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2?x (x < 2) thin films.