| 相变光盘介电层ZnS-SiO2薄膜的性能研究 |
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| 引用本文： | 刘波,阮昊,干福熹. 相变光盘介电层ZnS-SiO2薄膜的性能研究[J]. 无机材料学报, 2003, 18(1): 190 |
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| 作者姓名： | 刘波 阮昊 干福熹 |
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| 作者单位： | 中国科学院上海光学精密机械研究所 上海 201800 |
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| 摘 要： | 利用AFM、XRD、TEM、紫外可见光谱仪和椭偏仪等多种研究手段研究了ZnS-SiO2薄膜的性能.研究表明,沉积态ZnS-SiO2薄膜为非晶态,表现为层核生长型(Straski-Krastanov型)结构,表面很平滑,其中包含着大小为2-10nm的微小晶粒;ZnS-SiO2薄膜的透过率比较大,消光系数很小,这可以减少入射激光能量的损失;ZnS-SiO2薄膜拥有比较高的折射率,能够对记录层起到很好的保护作用.
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| 关 键 词： | ZnS-SiO2 介电层 相变光盘 |
| 收稿时间： | 2001-12-13 |
| 修稿时间： | 2002-02-01 |
Characteristics of ZnS-SiO2 Film Used as Phase-change Optical Disk Dielectric Layer |
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| LIU Bo,RUAN Hao,CAN Fu-Xi. Characteristics of ZnS-SiO2 Film Used as Phase-change Optical Disk Dielectric Layer[J]. Journal of Inorganic Materials, 2003, 18(1): 190 |
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| Authors: | LIU Bo RUAN Hao CAN Fu-Xi |
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| Affiliation: | Shanghai Institute of Optics and Fine Mechanics; Chinese Academy of Sciences; Shanghai 201800; China |
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| Abstract: | The characteristics of ZnS-SiO_2 dielectric film were studied by using AFM, XRD, TEM, UV/Vis/NIR spectrometer, and spectroscopic ellipsometer methods. It was indicated that the as-deposited ZnS-SiO2 film is amorphous and has Straski-Krastanov type growth characteristic. The surface of the ZnS-SiO2 film is very smooth. The grain size of the ZnS-SiO2 film is very small, around 2～10nm. The transmissivity of the ZnS-SiO2 film is large and the extinction coefficient is very small, which are beneficial to reduce the loss of laser power. The refractive index of the ZnS-SiO2 film is large and the recording layer can be protected very well. |
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| Keywords: | ZnS-SiO2 |
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