Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip |
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Authors: | P. E. Jessop L. K. Rowe S. M. McFaul A. P. Knights N. G. Tarr A. Tam |
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Affiliation: | (1) Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton, ON, Canada, L8S 4L7;(2) Department of Electronics, Carleton University, 1125 Colonel By Drive, Ottawa, ON, Canada, K1S 5B6 |
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Abstract: | We report the development of a silicon integrated circuit that combines conventional electronic circuitry with all-silicon optical waveguides, detectors and modulators. The circuit functions as an optical channel power leveller by amplifying current from a photodetector and feeding that current back to a modulator on the same waveguide. This article describes the use of local oxidation of silicon (LOCOS) for optical waveguide fabrication, the use of deep diffused wells to ensure electrical isolation between the forward biased modulator and detector diodes, and defect-engineering of the photodiodes to give them sufficient responsivity at the operating wavelength of 1.55 μm. |
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