Evaluation of radiation damaged p-in-n and n-in-n siliconmicrostrip detectors |
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| Authors: | Unno Y Yamashita T Terada S Kohriki T Moorhead G Iwata Y Takashima R Ikeda M Kitayama E Sato K Kondo T Ohsugi T Nakano I Fukunaga C Phillips PW Robinson D Johansen LG Riedler P Roe S Stapnes S Stugu B |
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| Affiliation: | Inst. of Particle & Nucl. Studies, High Energy Accel. Res. Organ., Tsukuba; |
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| Abstract: | Two p-in-n and one n-in-n silicon microstrip detectors were radiation-damaged and tested in a beam. A comparison was made between the p-in-n and the n-in-n in high resistivity wafers, and the p-in-n in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-in-n and the p-in-n detectors, which suggested that the signals were shared between strips more in the irradiated p-in-n detectors. Although a difference of the low and the high resistivity wafers was observed in the body capacitance measurement, little difference was observed in the beam test results |
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