Evaluation of radiation damaged p-in-n and n-in-n siliconmicrostrip detectors |
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| Authors: | Unno Y. Yamashita T. Terada S. Kohriki T. Moorhead G. Iwata Y. Takashima R. Ikeda M. Kitayama E. Sato K. Kondo T. Ohsugi T. Nakano I. Fukunaga C. Phillips P.W. Robinson D. Johansen L.G. Riedler P. Roe S. Stapnes S. Stugu B. |
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| Affiliation: | Inst. of Particle & Nucl. Studies, High Energy Accel. Res. Organ., Tsukuba; |
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| Abstract: | Two p-in-n and one n-in-n silicon microstrip detectors were radiation-damaged and tested in a beam. A comparison was made between the p-in-n and the n-in-n in high resistivity wafers, and the p-in-n in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-in-n and the p-in-n detectors, which suggested that the signals were shared between strips more in the irradiated p-in-n detectors. Although a difference of the low and the high resistivity wafers was observed in the body capacitance measurement, little difference was observed in the beam test results |
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