Si-and Be-implantations in lnP:Fe activated by halogen lamp rapid thermal annealing

Halogen lamp rapid thermal annealing is performed at different temperatures and time durations to activate InP:Fe implanted with 200 keV Si and 60 keV Be ions in the range of 5 x 10¹² -4 x 10¹⁴ cm^-2 . Better electrical properties are obtained in the rapid thermal annealed material than in conventional furnace annealed material. The mea-sured maximum dopant activation and electron mobility for a 200 keV/1 x 10¹⁴ cm^-2 Si-implant are 76% and 1440 cm²/V-s, respectively. For a 60 keV/4 x 10¹⁴ cm^-2 Be-implant an activation of 28% and a sheet resistance of 810 Ω/sq are obtained by using rapid thermal annealing. An implant profile broadening is observed in Be-implanted samples activated with either furnace annealing or rapid thermal annealing.