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The nature of mobile hydrogen in a-Si:H—Electrochemical studies
Authors:Katarína Gmucov  Vojtech Ndady  Rudolf Durný
Affiliation:aInstitute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 11 Bratislava, Slovak Republic;bDepartment of Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
Abstract:Electrochemical studies of both the a-Si:H based metal/oxide/semiconductor structures and a-Si:H modified Pt electrode as a part of two-electrode cell compartment with electrolyte were performed to obtain information on the nature of mobile hydrogen in a-Si:H. We assume, that the complex formed by a hydrogen molecule and a silicon dangling bond (the origin of Dh states) provides for mobile hydrogen. Information on the process of electron selfexchange (hopping) in a-Si:H driven by diffusion in the presence of a concentration gradient of redox centers is obtained. The capability of the electrochemical methods for studying the role of hydrogen in degradation of a-Si:H caused by bias annealing and/or illumination is demonstrated. Also, it was shown that because of the unique electrocatalytic features of the a-Si:H modified Pt electrode, the latter can act as a “programmable” and selective sensor of heavy metal ions and/or metal complexes.
Keywords:a-Si:H  Hydrogen diffusion  Gap states  Dangling bond  Semiconducting electrode  Redox centers
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