| Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks |
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| 作者姓名： | Wang Wei Sun Jianping Gu Ning |
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| 作者单位： | 东南大学生物电子学国家重点实验室，江苏省生物材料与器件重点实验室，南京 210096;美国密西根大学电气工程和计算机科学系，美国;东南大学生物电子学国家重点实验室，江苏省生物材料与器件重点实验室，南京 210096 |
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| 摘 要： | 介绍了一种纳米MOSFET(场效应管)栅电流的统一模型,该模型基于Schrodinger-Poisson方程自洽全量子数值解,特别适用于高k栅介质和多层高k栅介质纳米MOSFET.运用该方法计算了各种结构和材料高k介质的MOSFET栅极电流,并对pMOSFET和nMOSFET高k栅结构进行了分析比较.模拟得出栅极电流与实验结果符合,而得出的优化氮含量有待实验证实.
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| 关 键 词： | 高k 栅电流 量子模型 high- k gate current quantum model 栅介质 纳米 MOSFETs 电流模型 Gate Nanoscale Tunneling Current optimum nitrogen content HfSiON gate dielectric experimental data results consistent gate current gate stack quantum effects performance MOS device structures |
| 文章编号： | 0253-4177(2006)07-1170-07 |
| 收稿时间： | 01 24 2006 12:00AM |
| 修稿时间： | 3/29/2006 7:59:29 PM |
Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks |
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| Wang Wei,Sun Jianping,Gu Ning.Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks[J].Chinese Journal of Semiconductors,2006,27(7):1170-1176. |
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| Authors: | Wang Wei Sun Jianping and Gu Ning |
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| Affiliation: | State Laboratory of Bioelectronics, Jiangsu Laboratory for Biomaterials and Devices,Southeast University,Nanjing 210096,China;Department of Electrical Engineering and Computer Science,University of Michigan,USA;State Laboratory of Bioelectronics, Jiangsu Laboratory for Biomaterials and Devices,Southeast University,Nanjing 210096,China |
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| Abstract: | A quantum model based on solutions to the Schrodinger-Poisson equations is developed to investigate the device behavior related togate tunneling current for nanoscale MOSFETs with high-k gate stacks. This model can model various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks,revealing quantum effects on the device performance. Comparisons are made for gate current behavior between nMOSFET and pMOSFET high- k gate stack structures. The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications. |
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| Keywords: | high-k gate current quantum model |
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