硅片激光弯曲成形的数值模拟与实验

介绍了一种利用脉冲激光塑性化弯曲单晶硅片的新方法。在分析和描述光脉冲时空特性的基础上，运用有限元分析软件ANSYS对硅片弯曲过程进行建模仿真，得到了脉冲激光弯曲过程中温度场与应力应变的仿真结果。对脉冲激光作用过程中温度场与应力应变的周期性瞬间变化特征进行了描述，指出了脆性材料硅片的脉冲激光弯曲机理不属于简单意义上的温度梯度机理或屈曲机理，而是二种机理共同作用的结果。通过6次扫描试验实现了对硅片的有效弯曲，弯曲角度达6.5º，仿真结果与验证性试验相符。

Simulation and experimental investigation of laser bending of silicon sheet

A new method in pulsed laser bending of single-crystal silicon was presented in this paper. An analytical model was developed to describe the spatial-time characteristics of pulsed laser. In order to simulate the laser bending of process, the FEM software ANSYS was used, and the temperature field was predicted with stress-strain field in the bending process. The periodic transformation of temperature field and stress-strain distribution during pulsed laser scanning silicon sheet was analyzed, and the research results indicate that the mechanism of pulsed laser bending silicon is a hybrid mechanism, rather than a simplex mechanism of TM or BM. This paper also gets silicon sheet bended by scanning 6 times with pulsed laser, and the final bending angle is 6.5º, in which the simulation reaches well agreement with the experiments.