TiO2过渡层对Bi3.54Nd0.46Ti3O12薄膜微观结构及电性能的影响

选取厚度为5、10和20nm的TiO2薄膜为过渡层,采用sol-gel法在Pt/Ti/SiO2/Si衬底上制备了Bi3.54Nd0.46Ti3O12(BNT)铁电薄膜,研究了过渡层厚度对铁电薄膜微观结构及电学性质的影响。结果表明,加入TiO2过渡层后,BNT薄膜微观结构得到改善,εr及2Pr值大幅提高,介电损耗及漏电流密度都有降低。过渡层厚度为20nm时,BNT薄膜的εr、tanδ及2Pr值分别为325、0.025(测试频率为10kHz)和36.1×10–6C/cm2,漏电流密度为8.45×10–7A/cm2(外加电场为100×103V/cm)。

Effects of TiO2 buffer layer on the microstructure and electrical properties of Bi3.54Nd0.46Ti3O12 film

Bi_(3.54)Nd_(0.46)Ti_3O_(12) (BNT) ferroelectric films were fabricated on the Pt/Ti/SiO_2/Si substrate by sol-gel method with 5, 10 and 20 nm thick TiO_2 films as buffer layer. The effects of the thickness of TiO_2 buffer layer on the microstructure and electrical properties of BNT ferroelectric films were studied. The results show that, with the application of TiO_2 buffer layer, the microstructure of BNT films are improved, the ε_r and remanent polarization value (2P_r) of BNT films are increased while the dielectric loss and leakage current density are decreased. When the thickness of buffer layer is 20 nm, the ε_r, tanδ and 2P_r of BNT films are 325, 0.025(f = 10 kHz) and 36.1×10~(-6) C/cm~2, respectively, while the leakage current density is 8.45×10~(-7) A/cm~2 (E = 100×10~3 V/cm ).