氮化硅薄膜的等离子干法蚀刻

本文简述了干法腐蚀的现状、原理及其反应装置.给出了在圆筒型反应器中氮化硅薄膜的均匀刻蚀以及硅表面的平滑抛光的工艺条件,同时,也给出了在此工艺条件下,单晶硅、氮化硅、热生长二氧化硅、砷化镓以及光致抗蚀剂的腐蚀速率.对硅表面在高频场和等离子体轰击下表面性质的改变作了初步研究.并通过此工艺在制管中的成功应用,可看到它在降低成本,减少公害,以及进行微细加工方面所显示出来的优越性.目前,对实验结果和现象的分析尚处于定性的阶段.

Plasma Dry-Etching of Silicon Nitride Film

This paper simply describes the state-of-art, principles and a reactive device of dry-etching. Uniform etching of silicon nitride film and processing conditions for smooth polish of silicon surface in the barrel etcher are reported. At the same time, the etching rate of silicon single crystals, silicon nitride, thermally grown silicon dioxide, gallium arsenic and photoresist are present. Variation of silicon surface under high-frequency field and plasma bombardment are initially studied. From its successful use in fabrication of diodes, it exhibits the following advantages: low cost, less common harm and ease of microfabrication. At present, analysises for experiments and phenomena are still qualitatively.