Anomalous nanosecond transient component in a GaAs MODFETtechnology |
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| Authors: | Kaneshiro RT Kocot CP Jaeger RP Kofol JS Lin BJF Littau E Luechinger H Rohdin HG |
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| Affiliation: | Hewlett-Packard Lab., Palo Alto, CA; |
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| Abstract: | Modulation-doped field-effect transistors (MODFETs) exhibit transient responses that contain a variety of time constants. The strongest transients observed in the microsecond range are known to be caused by the DX centers. MODFETs also suffer a transient that arises from a source different from that of the DX centers. Preliminary measured characteristics of the nanosecond transient are presented, its effects on circuit performance are described, and its possible origin is inferred |
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