Various effects of silicidation on shallow p+ junctionsformed by BF2+ implantation into thin poly-Sifilms on Si substrates |
| |
| Authors: | Juang MH |
| |
| Affiliation: | Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei; |
| |
| Abstract: | Various effects of silicidation on shallow p+ n junctions formed by the scheme that implants BF2+ ions into thin poly-Si films on Si substrates are described. A post-Ni silicidation just slightly improves the preformed junctions of the annealed sample. However, as the sample is first deposited with thin Ni films after the implantation and then annealed, the resulting junctions are much better than the preformed ones. Moreover, as the sample is deposited with Ti films, the resultant junctions are just slightly better the preformed ones |
| |
| Keywords: | |
|
|
