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Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier |
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| Authors: | V. G. Popov Yu. V. Dubrovskii Yu. N. Khanin E. E. Vdovin D. K. Maude J. -C. Portal T. G. Andersson J. Thordson |
| Affiliation: | 1. Institute of Microelectronics Technology and Ultrapure Materials, Russian Academy of Sciences, 142432, Chernogolovka, Russia 2. High Magnetic Field Laboratory, CNRS, 38042, Grenoble Cedex, France 3. Department of Physics, Chalmers University of Technology, G?teborg, Sweden |
| Abstract: | Electron tunneling in a heterostructure with a single doped barrier was investigated. Analysis of the experimental data showed that all features in the tunneling conductance are due to electron tunneling between two-dimensional electron sheets which appear on different sides of the barrier as a result of ionization of impurities in the barrier. Electron transport between the two-dimensional electron sheets and three-dimensional contact regions does not introduce significant distortions in the measured tunneling characteristics. In such structures there is no current flow along the two-dimensional electron gas; such a current ordinarily makes it difficult to investigate tunneling between two-dimensional electronic systems in magnetic fields. Fiz. Tekh. Poluprovodn. 32, 602–606 (May 1998) |
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