MBE生长InGaAs/In_(0.32≤x≤0.52)Al_(1-x)As MM-HEMT材料

在GaAs衬底上利用分子束外延技术生长了不同In组分的MetamorphicHEMT(简称MM-HEMT)。通过对MM-HEMT材料中台阶式缓冲层材料种类、台阶宽度、初始组分以及生长温度等生长参数、生长条件和结构参数进行优化,得到了具有良好电学性能的MM-HEMT材料,其二维电子气迁移率和浓度指标与国外同期水平相当。

Growth of InGaAs/In0.32≤x≤0.52Al1-xAs MM-HEMTs materials by MBE

MM-HEMTs (short for metamorphic HEMTs )with different In contents on GaAs sub-strates have been grown by MBE.Good electrical properties of the materials for MM-HEMTs were gained through optimizing the graded buffer layers,step width,initial composition,the data of the growth temperature and structure as well as the growth conditions.The2DEG and concentra-tion of the materials correspond to the abroad level at the same period.