| 掺Pd二氧化锡薄膜结构表征 |
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| 引用本文： | 曹晓平,曹立礼.掺Pd二氧化锡薄膜结构表征[J].真空科学与技术学报,1997(2). |
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| 作者姓名： | 曹晓平 曹立礼 |
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| 作者单位： | 清华大学化学系!北京100084 |
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| 摘 要： | 利用X射线光电子谱（XPS）、扫描俄歇微探针（SAM）、X射线衍射（XRD）和差热-热重（DTA－TG）等多种分析技术，对由溶胶凝胶（Sol-Gel）法制备的Pd－SnO2薄膜试样的结构作了综合表征，系统地研究了热处理过程中试样结构及试样中Pd和Sn元素化学状态的变化规律。
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| 关 键 词： | Pd掺杂 SnO_2薄膜 溶胶凝胶法 X射线光电子谱 |
The Structural Characterization of Pd-doped SnO_2 Thin Films |
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| Cao Xiaoping,Cao Lili.The Structural Characterization of Pd-doped SnO_2 Thin Films[J].JOurnal of Vacuum Science and Technology,1997(2). |
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| Authors: | Cao Xiaoping Cao Lili |
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| Abstract: | In this paper,the structures of Pd-doped SnO2 thin films prepared by Sol-Gel are characterized comprehensively using XPS,SAM,XRD and DTA-TG techniques. It is observed that the structures of the thin films and the chemical states of Pd and Sn in the thin films change with the themal treatment.Doped Pd deceased the Fermi level of SnO2 semiconductor by about 0. 2 eV. |
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| Keywords: | Pd-doped SnO_2 thin film Sol-Gel method X-ray photoelectron spectroscopy |
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