Rectangular scale-similar etch pits in monocrystalline diamond |
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Authors: | Craig D. McGray Richard A. Allen Marc CangemiJon Geist |
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Affiliation: | a Semiconductor Elec. Div., Nat''l Inst. of Standards and Technology, Gaithersburg, MD 20899, United Statesb 3D Enablement Center, SEMATECH, Albany, NY 12203, United Statesc Cen. for Nanoscale Sci. and Tech., Nat''l Inst. of Standards and Technology, Gaithersburg, MD 20899, United States |
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Abstract: | Etching of monocrystalline diamond in oxygen and water vapor at 1100 °C through small pores in a silicon nitride film produced smooth-walled rectangular cavities. The cavities were imaged by electron microscopy and measured by interferometric microscopy. The observed cavities ranged in width from approximately 1 μm up to 72 μm, in each case exhibiting smooth, vertical sidewalls, a flat bottom, and a depth equal to half its width. Cavity boundaries were determined to lie along slow-etching {100} crystallographic planes, suggesting the possibility of a powerful class of techniques for high-aspect-ratio bulk micromachining of diamond. |
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Keywords: | Diamond Monocrystalline diamond Crystallographic etching Anisotropic etching Oxidation Micromachining MEMS |
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