A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging |
| |
| Authors: | Chen A Y-K Baeyens Y Chen Y-K Lin J |
| |
| Affiliation: | Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, USA; |
| |
| Abstract: | This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 $mu{rm m}$ SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is $-$11.4 dBm at 77 GHz with low power consumption of only 37 mW. |
| |
| Keywords: | |
|
|
