Low threshold current 1.3-/spl mu/m GaInNAs VCSELs grown by MOVPE |
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Authors: | A Yue K Shen Renfan Wang Jing Shi |
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Affiliation: | Dept. of Phys., Wuhan Univ., China; |
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Abstract: | The structure of the conventional contact 1.3-/spl mu/m GaInNAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) was optimized and low threshold current 1.3-/spl mu/m GaInNAs VCSELs grown by metal-organic vapor-phase epitaxy were reported. The idea is to optimize the active region, the doping profiles, and the pairs of p-distributed Bragg reflectors, and the detuning between the emission wavelength and the photoluminescence gain peak wavelength. The continuous-wave 1.0-mA threshold current was achieved for the single-mode VCSEL. For the multiple-mode VCSELs, the below 2-mA threshold currents at 5/spl deg/C-85/spl deg/C , the 1.13-mA threshold current at 55/spl deg/C, and 1.52-mA threshold current at 85/spl deg/C are the best results for 1.3-/spl mu/m GaInNAs VCSELs. |
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