Internal drift effects on the diffusion of Ag in CdTe

Anomalous diffusion profiles of Ag in single crystalline CdTe were observed using the radiotracer ¹¹¹Ag. The diffusion anneals were performed at 800 K under Cd or Te vapor and in vacuum with low Ag concentrations. The measured Ag profiles directly reflect the distribution of the self-interstitials and vacancies of the Cd sublattice and are the result of chemical self-diffusion which describes the variation of the deviation from stoichiometry of the binary crystal as a function of depth and time. It turned out that the spread of the Ag dopant essentially is determined by the drift of the charged defects within the electric field caused by the distribution of the extrinsic and intrinsic defects.