Affiliation: | (1) Division of Materials Science and Engineering, Korea University, 1 Anam-dong 5-ga, Seongbuk-gu, 136-701 Seoul, Korea;(2) IPT Development, Device Solution Network Business, Samsung Electronics Co., Ltd., San 74 Buksu-ri, Baebang-myeon, 336-711 Asan, Korea;(3) Device Packaging Center, Device Solution Network Business, Samsung Electronics Co., Ltd., San 74 Buksu-ri, Baebang-myeon, 336-711 Asan, Korea |
Abstract: | The effect on the growth kinetics of the intermetallic compounds (IMCs) in solder/Cu joints, caused by adding Bi to eutectic Sn-3.5Ag solder alloy, was examined at the aging temperatures of 150°C and 180°C. The Cu6Sn5 layer growth was significantly enhanced, but the Cu3Sn layer growth was slightly retarded by the addition of Bi, resulting in significant growth enhancement of the total (Cu6Sn5+Cu3Sn) IMC layer with increasing Bi addition. The IMC layer growth in the Bi-containing solder joints was accompanied by the accumulation of Bi ahead of the Cu6Sn5 layer that resulted in the formation of a liquid layer at the Cu6Sn5/solder interface. A kinetic model was developed for the planar growth of the Cu6Sn5 and Cu3Sn layers in the solder joints, accounting for the existence of interfacial reaction barriers. Predictions from the kinetic model showed that the experimental results could be well explained by the hypothesis that the formation of a Bi-rich liquid layer at the Cu6Sn5/solder interface reduces the interfacial reaction barrier at the interface. |