Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well |
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Authors: | Z Yarar B Ozdemir M Ozdemir |
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Affiliation: | 1. Department of Physics, Faculty of Arts and Sciences, Mersin University, ?iftlikk?y, 33343, Mersin, Turkey 2. Department of Physics, Cukurova University, Adana, 01330, Turkey
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Abstract: | We studied the transport and low-field mobility properties of bulk InN and a two-dimensional electron gas confined in an InGaN/GaN
quantum well with regard to various parameters such as well width and interface roughness as a function of temperature. Since
new material parameters for InN have been suggested by recent studies, the traditionally accepted and recently published parameter
values for InN are used in our simulations and the results are compared. Mobility values in two and three dimensions are found
from the steady-state drift velocities of carriers calculated using an ensemble Monte Carlo technique. Electron transport
properties of bulk GaN and AlN are also presented and compared with bulk InN and InGaN/GaN quantum wells. The mobility of
carriers in two dimensions is about 10,000 cm2/V s for low temperatures and in bulk InN increases significantly to a value of about 6,450 cm2/V s at room temperature when recently established material parameters are used. |
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Keywords: | Scattering Monte Carlo InGaN/GaN InN GaN AlN quantum well Schr?dinger– Poisson drift velocity mobility |
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