| ULSI铜互连线CMP抛光液的研制 |
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| 引用本文： | 王新,刘玉岭. ULSI铜互连线CMP抛光液的研制[J]. 半导体学报, 2002, 23(9): 1006-1008. DOI: 10.3969/j.issn.1674-4926.2002.09.021 |
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| 作者姓名： | 王新 刘玉岭 |
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| 作者单位： | 河北工业大学微电子所,天津,300130 |
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| 基金项目： | 国家自然科学基金;60176033; |
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| 摘 要： | 介绍了一种碱性抛光液,选用有机碱做介质,SiO2水溶胶做磨料,依据强络合的反应机理,克服了SiO2水溶胶做磨料对铜去除速率低及在溶液中凝胶的难点.实验结果表明:该抛光液适用于Cu化学机械抛光过程第一阶段的抛光,并达到了高抛光速率及铜/钽/介质层间的高选择性的效果.
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| 关 键 词： | 铜互连线 化学机械抛光 抛光液 |
| 文章编号： | 0253-4177(2002)09-1006-03 |
| 修稿时间： | 2002-01-04 |
CMP Slurry of Copper Interconnection for ULSI |
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| Wang Xin and Liu Yuling. CMP Slurry of Copper Interconnection for ULSI[J]. Chinese Journal of Semiconductors, 2002, 23(9): 1006-1008. DOI: 10.3969/j.issn.1674-4926.2002.09.021 |
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| Authors: | Wang Xin and Liu Yuling |
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| Abstract: | In order to avoid many scratches on copper surface caused by hard mechanical alumina abrasives in Cu CMP process,a new Cu CMP slurry is introduced in which organic amine is used for complex agent and colloidal silica(SiO 2) is used for abrasive particles.According to mechanism of strong complex,the issuses that copper layer is removed slowly by colloidal silica and silicon glue generates in solution are solved.The experimental result shows that the slurry is suitable for the first polishing of Cu CMP process with faster removal rate of Cu and high selectivity between Cu/Ta/SiO 2. |
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| Keywords: | copper interconnection CMP slurry |
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