室温下nc-Si/SiO2多层膜结构中的共振隧穿现象

采用等离子体淀积和原位氧化技术,并结合后续的热退火处理制备了nc-Si/SiO2 多层膜结构。通过电流电压特性对室温下器件中的载流子输运过程进行了表征。在正向和反向偏压下的电流电压特性曲线中都表现出了由于共振隧穿引起的负微分电导。共振隧穿产生的峰值电流对应的电压值与器件结构中的势垒层厚度相关,势垒层越厚,发生隧穿的峰值电压越高。文中通过器件的能带结构简图和等效电路图对正向、反向偏压下的共振隧穿峰值电压差异进行了细致的分析。

Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature

Nc-Si/SiO₂ multilayers were fabricated on silicon wafers in plasma enhanced chemical vapour deposition system using the in situ oxidation technology, followed by the three-step thermal treatments. Carrier transportation at room temperature is characterized by current voltage measurement and negative different conductance can be observed both under forward and negative biases, which is explained by resonant tunnelling. The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO₂ sublayers. And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias. Energy band diagram and equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.