Novel direct designs for 3-input XOR function for low-power and high-speed applications |
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Authors: | Mohammad Hossein Moaiyeri Reza Faghih Mirzaee Tooraj Nikoubin Omid Kavehei |
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Affiliation: | 1. Microelectronics Laboratory , Shahid Beheshti University, G. C. , Tehran, Iran;2. Faculty of Electrical and Computer Engineering , Shahid Beheshti University, G. C. , Tehran, Iran;3. Nanotechnology and Quantum Computing Laboratory , Shahid Beheshti University, G. C. , Tehran, Iran;4. Faculty of Electrical and Computer Engineering , Shahid Beheshti University, G. C. , Tehran, Iran;5. School of Electrical and Electronic Engineering, The University of Adelaide , Adelaide, SA, 5005, Australia |
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Abstract: | Novel direct designs for 3-input exclusive-OR (XOR) function at transistor level are proposed in this article. These designs are appropriate for low-power and high-speed applications. The critical path of the presented designs consists of only two pass-transistors, which causes low propagation delay. Neither complementary inputs, nor V DD and ground exist in the basic structure of these designs. The proposed designs have low dynamic and short-circuit power consumptions and their internal nodes dissipate negligible leakage power, which leads to low average power consumption. Some effective approaches are presented for improving the performance, voltage levels, and the driving capability and lowering the number of transistors of the basic structure of the designs. All of the proposed designs and several classical and state-of-the-art 3-input XOR circuits are simulated in a realistic condition using HSPICE with 90 nm CMOS technology at six supply voltages, ranging from 1.3 V down to 0.8 V. The simulation results demonstrate that the proposed circuits are superior in terms of speed, power consumption and power-delay product (PDP) with respect to other designs. |
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Keywords: | exclusive-OR (XOR) high-speed low-power very large scale integration (VLSI) leakage power |
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