Velocity overshoot analysis in SiGe and SiGeC HBT |
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| Authors: | Y Li R Cai |
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| Affiliation: | 1. Microelectronics Laboratory of Physical Department , University of Science and Technology of China , 230026, P.R. China yli@ustc.edu.cn;3. Microelectronics Laboratory of Physical Department , University of Science and Technology of China , 230026, P.R. China |
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| Abstract: | A velocity overshoot model of ultra-thin-base SiGe and SiGeC HBT is obtained. By deriving the Boltzmann electron temperature equation, 3000?K maxima near the collector-base junction of temperatures are found. Velocities distribution solutions considering velocity overshoot are achieved. Conclusions are that different germanium content percentage decides the maxima of overshoot velocities and base overshoot is observed. SiGeC HBT possesses approximately the same velocities as in SiGe HBT. |
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| Keywords: | Velocity overshoot SiGe HBT SiGeC HBT Electron temperature |
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