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Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors |
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| Authors: | Sheng Chang Qijun Huang Hao Wang |
| Affiliation: | 1. School of Physical Science and Technology, Wuhan University , Hubei, 430072, China;2. Institute of Microelectronics and Information Technology, Wuhan University , Hubei, 430072, China;3. School of Physical Science and Technology, Wuhan University , Hubei, 430072, China |
| Abstract: | Both the fundamental surface potential equations for undoped and doped symmetric double-gate MOSFETs are transcendental equations with exponentials, to which a general analytical solution is introduced. Given the lowest potential in the channel film, this solution can calculate the surface potentials of both undoped and doped symmetric double-gate MOSFETs accurately. This analytical approach could also be applied to solve other similar device equations with exponential transcendent structures. |
| Keywords: | surface potential symmetric double-gate metal-oxide-semiconductor field-effect transistor analytical solution |