Performance and optimisation of dual material gate short channel BULK MOSFETs for analogue/mixed signal applications |
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| Authors: | N. Mohankumar Binit Syamal C. K. Sarkar |
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| Affiliation: | 1. Electronics and Tele-communication Department , Jadavpur University , Kolkata, 700032, India nmkphdju@gmail.com;3. Electronics and Tele-communication Department , Jadavpur University , Kolkata, 700032, India |
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| Abstract: | The challenge of analogue operation of CMOS devices and its parameters is a very important study for future technologies. In this article, the performance of dual material gate bulk MOSFETs for analogue/mixed signal applications is explored. Moreover, the optimisation of the device is done based on the variation of length and work-function difference of the two gate metals. The effect of drain induced barrier lowering in this structure is studied in detail. Moreover the different analogue parameters such as transconductance (g m), output resistance (R o) tuning for high performance of the device are also investigated by extensive simulations. |
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| Keywords: | dual material gate short channel effects drain induced barrier lowering transconductance output resistance mixed signal applications |
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