A novel nanoscale SOI MOSFET with Si embedded layer as an effective heat sink |
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Authors: | Mohammad K Anvarifard |
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Affiliation: | Electrical and Computer Engineering Department, Semnan University, Semnan, Iran |
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Abstract: | A novel structure such as nanoscale silicon-on-insulator (SOI) MOSFET with silicon embedded layer (SEL-SOI) is proposed to reduce self-heating effects (SHEs) successfully. The SEL as a useful heat sink with high thermal conductivity is inserted inside the buried oxide. The SEL acts like a heat sink and is therefore easily able to distribute the lattice heat throughout the device. We noticed excellent improvement in the thermal performance of the device using two-dimensional and two-carrier device simulation. Our simulation results show that SHE has been dramatically reduced in the proposed structure. In regard to the simulated results, the SEL-SOI structure has shown good performance in comparison with the conventional SOI (C-SOI) structure when utilised in the high temperature applications. |
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Keywords: | embedded layer heat sink SOI MOSFET self-heating effect thermal conductivity |
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