Model for photo-induced long-term drain current transients in GaAs MESFETs |
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| Authors: | PETER GEORGE PING K. KO CHENMING HU |
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| Affiliation: | 1. ERL &2. EECS, University of California at Berkeley , Berkeley, CA 94720, U.S.A. |
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| Abstract: | A simple model is presented for the negative drain current transients observed in GaAs MESFETs when subjected to ionizing radiation. The two dominant mechanisms are proposed to be electron trapping under the Schottky gate and in the neutral semi-insulating substrate. The model is suitable for the design and evaluation of radiation-resistant GaAs MESFET integrated circuits using common electrical simulators such as SPICE3. |
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