Investigation of thermal effects on the single-finger heterojunction bipolar transistors |
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| Authors: | K. F. Yarn Y. H. Wang M. P. Houng B. K. Lew |
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| Affiliation: | 1. Department of Electronic Engineering , Far East College , Hsin-Shih, Tainan 744, Taiwan, R.O.C ymo86@yahoo.com.tw;3. Institute of Microelectronics, Department of Electrical Engineering , National Cheng Kung University , Tainan 701, Taiwan, R.O.C |
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| Abstract: | We will first derive a physics-based, analytical single-finger heterojunction bipolar transistor (HBT) model which takes into account the thermal effect. Next, the model is used to calculate the three figures of merit of HBT, i.e., current gain, cut-off frequency and maximum frequency. Their variation against the collector current density under the influence of thermal effect is presented and the calculation results are discussed. |
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| Keywords: | Heterojunction bipolar transistor (HBT) Thermal conductivity Cut-off frequency Maximum frequency |
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