Donor ion-implantation doping into SiC |
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| Authors: | Mulpuri V Rao J Tucker O W Holland N Papanicolaou P H Chi J W Kretchmer M Ghezzo |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, George Mason University, 22030 Fairfax, VA;(2) Oak Ridge National Laboratory, 37831 Oak Ridge, TN;(3) Naval Research Laboratory, 20375 Washington, D.C.;(4) National Institute of Standards and Technology, 20899 Gaithersburg, MD;(5) General Electric Corporate Research and Development, 12301 Schenectady, NY |
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| Abstract: | In this paper, dopant electrical activation and dopant thermal stability results of As and Sb-implanted 6H-SiC epitaxial layers
and N ion implantations into bulk semi-insulating (SI) 4H-SiC are presented. In addition, empirical formulas for the first
four statistical moments (range, straggle, skewness, and kurtosis) of the implant depth distributions of N and P ion implants
are developed in the energy range of 50 keV to 4 MeV. The nitrogen ion-implantations in SI 4H-SiC yield an acceptable (27%)
room-temperature electrical activation (ratio of measured sheet carrier concentration at room-temperature to the implant dose)
for N concentrations of 2×1019 cm−3. The As and Sb implants out-diffuse during annealing and yield low (<20%) room-temperature electrical activation for implant
concentrations of 1019 cm−3. The N and P implant depth distributions in SiC can be simulated using the Pearson IV distribution function and the range
statistics provided by the empirical formulas. |
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| Keywords: | Activation annealing donors ion-implantation SiC |
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