| 基于SOI的E型膜结构耐高温压力芯片的设计与制造 |
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| 引用本文： | 李闯,赵立波,王尊敬,张磊,殷振.基于SOI的E型膜结构耐高温压力芯片的设计与制造[J].仪表技术与传感器,2021(1):20-24. |
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| 作者姓名： | 李闯 赵立波 王尊敬 张磊 殷振 |
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| 作者单位： | 苏州长风航空电子有限公司传感器事业部;西安交通大学机械学院;苏州科技大学机械工程学院 |
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| 基金项目： | 博士后国际交流计划引进项目(博管办[2018]115号);中国博士后科学基金第65批面上资助(2019M651934);2019江苏省资助招收博士后项目(苏人社发[2019]155号)。 |
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| 摘 要： | 文中设计了一种基于SOI材料的E型膜结构无引线倒封装压力芯片。SOI材料的选用解决了高温环境下漏电流的问题,可以满足目前航空发动机对于高温使用环境的要求。E型膜结构与传统C型膜结构相比解决了灵敏度与线性度无法同时满足需求的难题。通过无引线倒封装工艺,实现了传感器小型化、轻量化的设计需求。设计的压力传感器量程为0~1.5 MPa,400℃输出灵敏度为80 mV/MPa,线性度0.17%FS,综合精度0.18%FS。传感器最大外廓尺寸为S10 mm×20 mm,传感器质量为15.5 g。
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| 关 键 词： | 耐高温压力传感器 绝缘体上硅SOI E型可动膜片 无引线倒封装 高精度 小体积 |
Design and Fabrication of E-type Membrane Structural High Temperature Pressure Chip Based on SOI |
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| LI Chuang,ZHAO Li-bo,WANG Zun-jing,ZHANG Lei,YIN Zhen.Design and Fabrication of E-type Membrane Structural High Temperature Pressure Chip Based on SOI[J].Instrument Technique and Sensor,2021(1):20-24. |
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| Authors: | LI Chuang ZHAO Li-bo WANG Zun-jing ZHANG Lei YIN Zhen |
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| Affiliation: | (Suzhou Changfeng Avionics Co.,Ltd,Sensor Division,Suzhou 215151,China;School of Mechanical Engineering,Xi an Jiaotong University,Xi an 710049,China;School of Mechanical Engineering,Suzhou University of Science and Technology,Suzhou 215009,China) |
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| Abstract: | This paper designed a leadless packaging pressure chip with E-type structural membrane based on SOI material.SOI material solved the problem of leakage current in high temperature,which can meet the requirements of aero-engine in high temperature environment.Compared with traditional C-type,E-type structural membrane solved the problem that the sensitivity and linearity can not meet requirements at the same time.Through the leadless packaging process,the miniaturization and lightweight design of the sensor were realized.The results show that the sensor achieved a sensitivity of 80 mV/MPa,a linearity of 0.17%FS,and an accuracy of 0.18%FS in the range of 0~1.5 MPa in 400℃condition.In addition,the maximum overall dimension of the sensor is S10 mm×20 mm,and the weight of the sensor is 15.5 g. |
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| Keywords: | high temperature pressure sensor silicon on insulator SOI E-type membrane leadless packaging high accuracy small volume |
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