首页 | 本学科首页   官方微博 | 高级检索  
     

CdO - ZnO复合薄膜的光电学特性研究
引用本文:金健,栾书多,顾广瑞. CdO - ZnO复合薄膜的光电学特性研究[J]. 延边大学学报(自然科学版), 2021, 0(2): 126-130
作者姓名:金健  栾书多  顾广瑞
作者单位:(延边大学 理学院, 吉林 延吉 133002)
摘    要:采用磁控溅射技术制备了不同原子百分比的CdO - ZnO复合薄膜,并利用X射线衍射仪、扫描电子显微镜、紫外可见近红外分光光度计、四探针电阻测试仪研究了薄膜的结构和光电学特性.研究表明:适量增加CdO掺杂量可提高薄膜在近红外区域的透射率; CdO - ZnO复合薄膜的光学带隙和电阻率随CdO含量的增加而减小,且当CdO和ZnO的原子百分比为4:1时薄膜的带隙和电阻率分别为2.09 eV和10.79×10-3 Ω·cm.该研究结果可为制备高导电性和高透过率的薄膜提供参考.

关 键 词:CdO - ZnO复合薄膜  磁控溅射  掺杂  光学性能  电学性能

Optical and electrical properties of CdO - ZnO composite films
JIN Jian,LUAN Shuduo,GU Guangrui. Optical and electrical properties of CdO - ZnO composite films[J]. Journal of Yanbian University (Natural Science), 2021, 0(2): 126-130
Authors:JIN Jian  LUAN Shuduo  GU Guangrui
Affiliation:(College of Science, Yanbian University, Yanji 133002, China)
Abstract:Using radio frequency(RF)magnetron sputtering technology, CdO - ZnO composite films were prepared with different atomic percentages. The influences of different atomic percentages on structural, morphological and optical properties of CdO - ZnO composite films were discussed in detail by X - ray diffraction. The structure and photoelectric properties of the film was investigated scanning electron microscopy and ultraviolet visible near - infrared spectrophotometer, respectively. The results show that increasing the amount of CdO doping appropriately can increase the transmittance of the film in the near - infrared region; the optical band gap value of CdO - ZnO composite film decreases with the increase of the CdO content, and when the atomic percentage of CdO and ZnO is 4:1, the band gap and resistivity of the film are 2.09 eV and 10.79×10-3 Ω·cm, respectively. The research results can provide reference for the preparation of high conductivity and high transmittance films.
Keywords:CdO - ZnO composite films   magnetron sputtering   doping   optical properties   electrical properties
本文献已被 CNKI 等数据库收录!
点击此处可从《延边大学学报(自然科学版)》浏览原始摘要信息
点击此处可从《延边大学学报(自然科学版)》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号