Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films |
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| Authors: | Ying Li Gaoyang Zhao Jian Su Erfeng Shen Yang Ren |
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| Affiliation: | 1. Advanced Material Analysis Center, Xi’an University of Technology, Box 759#, No. 5, Jinhua South Road, Xi’an, Shaanxi, 710048, China
2. Material Science and Engineering School, Xi’an University of Technology, Xi’an, Shaanxi, 710048, China
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| Abstract: | We have fabricated ZrO2 thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible I–V curves can be obtained for the device Cu/ZrO2/ATO which is measured at room temperature (300 K). During the RESET operation, R L and R H values can be controlled by the RESET voltage. Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of R off/R on reduced when the measured temperature decreased. When the I–V measurement temperature decreases, R on decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO2 films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated. |
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