Photoluminescence as a tool for investigations of the junction region in Cu(In,Ga)Se<sub>2</sub>-based solar cells期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Photoluminescence as a tool for investigations of the junction region in Cu(In,Ga)Se₂-based solar cells

Authors:	M. Pawlowski P. ZabierowskiR. Bacewicz H. MarkoN. Barreau

Affiliation:	^a Faculty of Physics, Warsaw University of Technology, Koszykowa 75, PL 00-662 Warsaw, Poland ^b Institut des Matériaux Jean Rouxel (IMN-UMR 6502), Université de Nantes, CNRS, 2 rue de la Houssnière, BP 32229, 44322 Nantes Cedex 3, France

Abstract:	We use different modes of photoluminescence (PL) technique to investigate recombination processes within the junction region of Cu(In,Ga)Se₂-based solar cells. Components of the PL spectra associated with recombination within the junction region and in the bulk are distinguished. We provide arguments for the interpretation of the double diode effect in the p+ layer model basing on a close correlation between fill factor, PL intensity, and changes of space charge distribution induced by blue and red illumination.

Keywords:	CIGSe Photoluminescence p⁺ layer Fill factor Double diode
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