A phenomenological model of polishing of silicon with diamond abrasive |
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| Authors: | Paras M. Agrawal R. Narulkar S. Bukkapatnam L.M. Raff R. Komanduri |
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| Affiliation: | 1. Mechanical and Aerospace Engineering, 218 Engineering North, Oklahoma State University, Stillwater, OK 74078, USA;2. Industrial Engineering and Management, 322 Engineering North, Oklahoma State University, Stillwater, OK 74078, USA;3. Chemistry Department, 107 Physical Science, Oklahoma State University, Stillwater, OK 74078, USA;1. Institute of Manufacturing Engineering, Huaqiao University, Xiamen, 361021, Fujian Province, PR China;2. MOE Engineering Research Center for Brittle Materials Machining, Huaqiao University, Xiamen 361021, PR China;1. Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, Fujian Province, PR China;2. MOE Engineering Research Center for Brittle Materials Machining, Huaqiao University, Xiamen 361021, PR China;1. School of Mechanical and Electric Engineering, Soochow University, Suzhou, Jiangsu 215021, China;2. School of Mechanical Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China |
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| Abstract: | A phenomenological model of polishing hemispherical silicon asperities with spherical diamond abrasives is presented. Removal of the asperity material is quantitatively determined by a removal rate constant K. It is based on our molecular dynamics (MD) simulation studies considering the probability of removal of asperity atoms by an abrasive. The dependence of the removal rate constant K on the diameter and velocity of abrasives, number of asperities and abrasives per unit area, and cutting depth has been investigated. The rate constant K is found to be insensitive to the density of asperities, but linearly dependent on the density of abrasives. |
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| Keywords: | Polishing Simulation Rate |
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