Low voltage organic light emitting diode using p–i–n structure

Efficient n-type doping has been achieved by doping Liq in electron transport material Alq₃. Detailed investigation of current density–voltage characteristics of electron only devices with different doping concentrations of Liq in Alq₃ has been performed. An increase in current density by two orders of magnitude has been achieved with 33 wt% of Liq doped in Alq₃. Organic light emitting diode with p–i–n structure was fabricated using F₄-TCNQ doped α-NPD as hole transport layer, Ir(ppy)₃ doped CBP as emitting layer and 33 wt% Liq doped Alq₃ as electron transport layer. Comparison of OLEDs fabricated using undoped Alq₃ and 33 wt% Liq doped Alq₃ as electron transport layer shows reduction in turn on voltage from 5 to 2.5 V and enhancement of power efficiency from 5.8 to 10.6 lm/W at 5 V.