|
|||||
|
|
Improved device performance based on crosslinking of poly (3-hexylthiophene) |
|
| Authors: | Manoj Gaur Jaya Lohani R Raman VR Balakrishnan P Raghunathan SV Eswaran |
| Affiliation: | 1. St. Stephen''s College, University of Delhi, Delhi 110007, India;2. Solid State Physics Laboratory, Lucknow Road, Delhi 110054, India;3. National Brain Research Centre, Manesar 122050, India |
| Abstract: | Diode devices (glass/ITO/polymer/Al) have been fabricated using poly (3-hexylthiophene) (P3HT) crosslinked with two different biaryl crosslinkers. Crosslinking was performed by exposing the thin films with different wt% of crosslinker to UV irradiation and progress of crosslinking was monitored by IR spectroscopy. An increase in hole mobility of two orders of magnitude has been observed after crosslinking. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |