High-performance n-type organic field-effect transistors fabricated by ink-jet printing using a C60 derivative |
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| Authors: | Eun Young Park Jin Sun Park Tae-Dong Kim Kwang-Sup Lee Hyun Seok Lim Jong Sun Lim Changjin Lee |
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| Affiliation: | 1. Department of Advanced Materials, Hannam University, 461-6 Jeonmin-dong, Yuseong-gu, Daejeon 305-811, Republic of Korea;2. Korea Research Institute of Chemical Technology, 19 Sinseongro, Yuseong-gu, Daejeon 305-600, Republic of Korea |
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| Abstract: | We report on the performance of ink-jet-printed n-type organic thin-film transistors (OTFTs) based on a C60 derivative, namely, C60-fused N-methyl-2-(3-hexylthiophen-2-yl)pyrrolidine (C60TH-Hx). The new devices exhibit excellent n-channel performance, with a highest mobility of 2.8 × 10?2 cm2 V?1 s?1, an IOn/IOff ratio of about 1 × 106, and a threshold voltage of 7 V. The C60TH-Hx films show large crystalline domains that result from the influence of an evaporation-induced flow, thus leading to high electron mobility in the ink-jet-printed devices. |
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