Fast,simple ZnO/organic CMOS integrated circuits |
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| Authors: | Devin A Mourey Sung Kyu Park Dalong A Zhao Jie Sun Yuanyuan V Li Sankar Subramanian Shelby F Nelson David H Levy John E Anthony Thomas N Jackson |
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| Affiliation: | 1. Center for Thin Film Devices and Materials Research Institute, Penn State University, University Park, PA 16802, USA;2. Department of Material Science Engineering, Penn State University, University Park, PA 16802, USA;3. Department of Electrical Engineering, Penn State University, University Park, PA 16802, USA;4. Eastman Kodak Company, Rochester, NY 14650, USA;5. Department of Chemistry, University of Kentucky, Lexington, KY 40506, USA |
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| Abstract: | Hybrid organic–inorganic CMOS thin-film circuits are a simple, potentially low-cost, approach for large-area, low-power microelectronic applications. We have used atmospheric pressure processes to deposit inorganic ZnO and organic diF TES-ADT semiconductor layers and an Al2O3 gate dielectric. The organic semiconductor uses a contact-treatment-related microstructure that allows circuits to operate without directly patterning the organic layer. Using a simple 4-mask process with bifunctional Ti/Au contacts for both ZnO and organic transistors, 7-stage ring oscillators were fabricated and operated at >500 kHz corresponding to a propagation delay of <150 ns/stage at a supply bias of 35 V. These are the fastest organic–inorganic CMOS circuits reported to date. |
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