| 两种晶体管饱和输出状态的比较分析 |
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| 引用本文： | 刘晓东,涂丽平.两种晶体管饱和输出状态的比较分析[J].电气电子教学学报,2020(1):118-123. |
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| 作者姓名： | 刘晓东 涂丽平 |
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| 作者单位： | 天津工业大学物理科学与技术学院;天津工业大学工程教学实习训练中心 |
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| 基金项目： | 教育部留学归国人员科研启动基金(编号:第48批) |
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| 摘 要： | 在高校的“数字电路”课程教学中,通常要对分立NPN晶体管和TTL门电路的低电平输出近饱和、饱和以及退饱和状态进行讲解,其中出现了貌似矛盾的现象。本文给出了两种情况下的比较分析,力图廓清对它们模棱两可的理解,并尝试给出了“被动饱和”与“主动饱和”两个新概念,建议了更为合理的饱和深度的定量表达式,以期对相关的教学以及教材编写起到积极的作用。
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| 关 键 词： | TTL门电路 被动饱和 主动饱和 饱和深度 |
Comparative Analysis on Two Kinds of Saturation Output States of The Transistors |
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| Liu Xiao-dong,Tu Li-ping.Comparative Analysis on Two Kinds of Saturation Output States of The Transistors[J].Journal of Electrical & Electronic Engineering Education,2020(1):118-123. |
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| Authors: | Liu Xiao-dong Tu Li-ping |
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| Affiliation: | (School of Physical Science and Technology,Tianjin Polytechnic University,Tianjin 300387,China;Engineering Teaching Practice Training Center,Tianjin Polytechnic University,Tianjin 300387,China) |
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| Abstract: | In the teaching process of Digital Circuit course in colleges and universities,it is common to explain the near-saturation,saturation and de-saturation of the low-level outputs of a discrete NPN transistor and a TTL gate circuit,and there seems to be seemingly contradictory phenomena.This paper gives a comparative analysis of the two cases,trying to clarify their fuzzy understanding.Furthermore,we try to give two new concepts of"passive saturation"and"active saturation",and suggest a more reasonable quantitative expression of the saturation depth.This paper is expected to play a positive role in the teaching of the related electronic technology basic courses and in the preparation of teaching materials. |
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| Keywords: | TTL gate passive saturation active saturation saturation depth |
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