Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors |
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Authors: | Yong-Young Noh Henning Sirringhaus |
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Affiliation: | 1. Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom;2. Convergence Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea |
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Abstract: | We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30–50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hexane. The top-gate polymer transistors with thin gate dielectrics were operated at gate voltages less than ?8 V with a relatively high dielectric breakdown strength (>3 MV/cm) and a low leakage current (10–100 nA/mm2 at 2 MV/cm). The yield of thin gate dielectrics in top-gate polymer FETs is correlated with the roughness of underlying semiconducting polymer film. High mobilities of 0.1–0.2 cm2/V s and on and off state current ratios of 104 were achieved with the high performance semiconducting polymer, poly(2,5-bis(3-alkylthiophen-2yl)thieno3,2-b]thiophene. |
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